By Topic

Growth and electronic and magnetic properties of α-FeSe films on GaAs (001) substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Liu, K.W. ; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 Dongnanhu Road, Changchun 130033, China and Graduate School of the Chinese Academy of Sciences, Beijing 100049, China ; Zhang, J.Y. ; Li, Binghui ; Li, Bingsheng
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

FeSe films have been grown on GaAs (001) substrates by low-pressure metal organic vapor deposition at different temperatures. X-ray diffraction analysis indicated that the FeSe films grown at substrate temperatures (Ts) between 220 and 340 °C were preferentially oriented with tetragonal structure. It was not possible to deposit films at Ts above 400 °C. The atomic molar ratios of Se/Fe increased with increasing the flow rate of H2Se/Fe(CO)5 and the growth temperature. The electronic property results showed that the conductive type of FeSe could be adjusted by controlling the growth temperature. The coercivity of FeSe decreased with increasing the growth temperature from 220 to 300 °C due to the improvement of crystal quality.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:25 ,  Issue: 2 )