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Growth and electronic and magnetic properties of α-FeSe films on GaAs (001) substrates

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7 Author(s)
Liu, K.W. ; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 Dongnanhu Road, Changchun 130033, China and Graduate School of the Chinese Academy of Sciences, Beijing 100049, China ; Zhang, J.Y. ; Li, Binghui ; Li, Bingsheng
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FeSe films have been grown on GaAs (001) substrates by low-pressure metal organic vapor deposition at different temperatures. X-ray diffraction analysis indicated that the FeSe films grown at substrate temperatures (Ts) between 220 and 340 °C were preferentially oriented with tetragonal structure. It was not possible to deposit films at Ts above 400 °C. The atomic molar ratios of Se/Fe increased with increasing the flow rate of H2Se/Fe(CO)5 and the growth temperature. The electronic property results showed that the conductive type of FeSe could be adjusted by controlling the growth temperature. The coercivity of FeSe decreased with increasing the growth temperature from 220 to 300 °C due to the improvement of crystal quality.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:25 ,  Issue: 2 )