Cart (Loading....) | Create Account
Close category search window

In situ spectroscopic ellipsometry analyses of hafnium diboride thin films deposited by single-source chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Yang, Yu ; Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, 1304 West Green Street, Urbana, Illinois 61801 and Frederick Seitz Materials Research Laboratory, 104 South Goodwin Avenue, Urbana, Illinois 61801 ; Jayaraman, Sreenivas ; Sperling, Brent ; Kim, Do Young
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In situ spectroscopic ellipsometry was used to analyze hafnium diboride thin films deposited by chemical vapor deposition from the single-source precursor Hf(BH4)4. By modeling the film optical constants with a Drude-Lorentz model, the film thickness, surface roughness, and electrical resistivity were measured in situ. The calculated resistivity for amorphous films deposited at low temperature ranged from 340 to 760 μΩ cm. These values are within 25% of those measured ex situ with a four-point probe, indicating the validity of the optical model. By modeling the real-time data in terms of film thickness and surface roughness, the film nucleation and growth morphology were determined as a function of substrate type, substrate temperature, and precursor pressure. The data show that at low precursor pressures (∼10-6 Torr) and at low substrate temperatures (≪300 °C), the onset of growth is delayed on both Si and SiO2 surfaces due to the difficulty of nucleation. A higher substrate temperature or precursor pressure reduces this delay. At low temperatures the film morphology is a sensitive function of the precursor pressure because site-blocking effects change the reaction probability; the authors show that the morphology of newly grown film can be reversibly transformed from dense smooth to rough columnar by decreasing the precursor pressure.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:25 ,  Issue: 1 )

Date of Publication:

Jan 2007

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.