By Topic

Manganese-induced long-range lattice disorder and vacancy formation in metal-organic chemical vapor deposition grown and ion-implanted Ga1-xMnxN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Fenwick, William E. ; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250 ; Asghar, Ali ; Gupta, Shalini ; Kang, Hun
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2201052 

The structural properties and lattice dynamics of Ga1-xMnxN were studied for Mn concentrations from 0.0% to 1.5%. Ga1-xMnxN layers were fabricated by either Mn incorporation during the metal-organic chemical vapor deposition (MOCVD) growth process or by postgrowth ion implantation into MOCVD-grown GaN epilayers. The crystalline integrity and the absence of major second phase contributions were confirmed by high-resolution x-ray diffraction analysis. Raman spectroscopy showed that increased Mn incorporation in the epilayers significantly affected long-range lattice ordering, revealing a disorder-induced mode at 300 cm-1 and a local vibrational mode at 669 cm-1. The low intensities of both modes were shown to scale with Mn concentration. These observations support the formation of nitrogen vacancies, even under optimized MOCVD growth conditions. The slight excess of metal components in the growth process compared to undoped GaN growth and the incorporation of Mn deep acceptor levels favors the formation of nitrogen vacancies relative to undoped GaN. Such vacancies form shallow donor complexes and thus contribute to self-compensation. Electronic defects such as these may be detrimental to the ferromagnetic ordering process.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:24 ,  Issue: 4 )