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Fabrication and optical properties of self assembled InGaAs quantum dots embedded in microcavities

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5 Author(s)
Schur, R. ; Inst. of Ind. Sci., Tokyo Univ., Japan ; Nishioka, M. ; Kitamura, M. ; Watabe, H.
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We demonstrate the fabrication of a vertical microcavity laser structure with an active layer of Stranski-Krastanow quantum dots. The microcavity consists of an InGaAs quantum dot layer grown by MOCVD, located between two AlAs/Al0.2Ga0.8As distributed Bragg-reflector mirrors. The length of the microcavity was 1 λ(λ=1007 nm). Very narrow linewidths of the spontaneous PL-emission was observed as an clear evidence of the cavity effect. The PL-linewidth of reference samples that were grown without a cavity proves to be significantly broader

Published in:

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Date of Conference:

21-25 Apr 1996