Fabrication and optical properties of self assembled InGaAs quantum dots embedded in microcavities

We demonstrate the fabrication of a vertical microcavity laser structure with an active layer of Stranski-Krastanow quantum dots. The microcavity consists of an InGaAs quantum dot layer grown by MOCVD, located between two AlAs/Al/sub 0.2/Ga/sub 0.8/As distributed Bragg-reflector mirrors. The length of the microcavity was 1 /spl lambda/(/spl lambda/=1007 nm). Very narrow linewidths of the spontaneous PL-emission was observed as an clear evidence of the cavity effect. The PL-linewidth of reference samples that were grown without a cavity proves to be significantly broader.