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High characteristics temperature of strain-compensated 1.3 μm InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy

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5 Author(s)
Savolainen, P. ; Dept. of Phys., Tampere Univ. of Technol., Finland ; Toivonen, M. ; Salokatve, A. ; Asonen, H.
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In this paper, we have studied InAsP/InGaP/InP strain-compensated lasers with 10 QWs grown by all solid source molecular beam epitaxy (SSMBE). High characteristic temperature T0 value of about 100 K in the temperature range 20-80°C and low threshold current density of 87 A/cm2 per well for infinite cavity length are reported. Our results clearly demonstrate the suitability of the InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures. Also, together with our earlier studies the obtained results show that SSMBE is a competitive growth method for optoelectronic devices

Published in:

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Date of Conference:

21-25 Apr 1996