By Topic

Parasitics-aware layout design of a low-power fully integrated complementary metal-oxide semiconductor power amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Abdelsayed, S.M. ; Department of Electrical and Computer Engineering, McMaster University, Ontario L8S 4K1, Canada ; Deen, M.J. ; Nikolova, N.K.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

There is a need for efficient fully integrated complementary metal-oxide semiconductor (CMOS) power amplifiers (PAs) for very low power implanted biomedical transceiver systems. However, the parasitics of on-silicon interconnections can cause significant degradation in the performance of radio frequency integrated circuits, in general, and PAs, in particular. In this article, we propose a special layout design approach, which was used to design the layout of a CMOS PA. This approach relies on modeling the interconnection wires in the simulations and optimizing their widths for minimum parasitic effects and hence optimum measured circuit performance. The PA circuit is operating at 2.45 GHz and is implemented in a standard 0.18 μm CMOS process. Measurement results show that at a supply voltage of 1.4 V, the PA delivers an output power of 4.5 mW with 28.5% power-added efficiency and a power gain of 21.5 dB. Owing to the careful layout design and interconnection optimization, the implemented PA circuit shows good efficiency and demonstrates a good match between the measured and simulated performance characteristics.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:24 ,  Issue: 3 )