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High-performance n-channel 13.56 MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors

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3 Author(s)
Czang-Ho Lee ; Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada ; Sazonov, A. ; Nathan, A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.2194027 

Hydrogenated nanocrystalline silicon (nc-Si:H) films were directly deposited by using 13.56 MHz plasma-enhanced chemical vapor deposition at a substrate temperature of 260 °C with highly hydrogen (H2) diluted silane (SiH4) gases. The nc-Si:H film showed a high Raman crystalline volume fraction (XC∼85%) and low oxygen concentration (CO∼1.5×1017 at./cm3). The formation of high-quality nc-Si:H is explained in terms of the effective roles of atomic hydrogen in the plasma. Top-gate staggered n-channel thin-film transistors (TFTs) adopting 90–100 nm nc-Si:H channel and ∼300 nm hydrogenated amorphous silicon oxide (a-SiOx) gate dielectric layers showed a field-effect mobility FE) of ∼150 cm2/V s, a threshold voltage (VT) of ∼2 V, a subthreshold slope (S) of ∼0.23 V/dec, and an on/off current ratio of more than 106. The TFT performance reported here offers promise for the total integration of peripheral electronics for active-matrix flat panel systems.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:24 ,  Issue: 3 )

Date of Publication:

May 2006

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