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Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry

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6 Author(s)
Heil, S.B.S. ; Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands ; Langereis, E. ; Kemmeren, A. ; Roozeboom, F.
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In situ spectroscopic ellipsometry has been employed to determine the properties of titanium nitride (TiN) films during plasma-assisted atomic layer deposition by alternating TiCl4 precursor dosing and H2N2 plasma exposure. Besides monitoring the film thickness when optimizing the half reactions, it is shown that spectroscopic ellipsometry is a very valuable tool for in situ studies of (air-sensitive) film properties such as resistivity, and for investigating the nucleation phase during initial film growth.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:23 ,  Issue: 4 )

Date of Publication:

Jul 2005

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