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Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substrates

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5 Author(s)
Okuyama, Yoshi ; AVIZA Technology, 440 Kings Village Road, Scotts Valley, California 95066 ; Barelli, Carl ; Tousseau, Christopher ; Park, Seung
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Atomic layer deposition (ALD) of hafnium silicate HfxSi1-xO2 thin films from tetrakis(ethylmethylamino)hafnium, tetrakis(ethylmethylamino)silicon, and ozone was accomplished onto 300-mm-diam Si substrates using a hot-wall furnace system with a 50-wafer batch configuration. For 23-nm-thick hafnium silicate, excellent film thickness uniformity with a mean within-wafer uniformity of 0.84% (1σ/mean) and a wafer-to-wafer thickness uniformity of 0.80% (1σ/mean) was achieved over the top, middle, and bottom wafers in the full batch process. Over three times enhancement in wafer-per-hour throughput per chamber was observed as compared with a single-wafer ALD module.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:23 ,  Issue: 3 )