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Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO2 surfaces

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3 Author(s)
Kimura, Yoshie ; Department of Chemical Engineering, University of California at Berkeley, 2016 Gilman Hall, Berkeley, California 94720 ; Coburn, J.W. ; Graves, D.B.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1810166 

Si and SiO2 were exposed to c-C4F8 with and without Ar+, and to a mixture of characterized CxFy radical and stable species with and without Ar+. The mixture of CxFy radical and stable species was created from c-C4F8 and Ar plasma and included CF, CF2, CF3, and various heavy CxFy species. The neutral fluorocarbon flux to Ar+ flux and the energy of the Ar+ were varied. During the exposure, etch/deposition rates were measured and the flux of CxFy species leaving the surface for various conditions were qualitatively determined. The following were observed: (1) c-C4F8 is an etchant with Ar+ bombardment; (2) the CF, CF2, and CF3 species flux cannot account for the observed mass increase during depositing conditions; (3) CF2 and CF3 species are net products during etching conditions; and (4) the flux of large CxFy speci- - es leaving the surface is smaller during etching conditions than for depositing conditions. These observations imply that large CxFy species play a significant role in the surface chemistry.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 6 )

Date of Publication:

Nov 2004

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