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Infrared spectroscopic study of atomic layer deposition mechanism for hafnium silicate thin films using HfCl2[N(SiMe3)2]2 and H2O

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3 Author(s)
Kang, Sang-Woo ; Laboratory for Advanced Molecular Processing (LAMP), Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea ; Rhee, Shi-Woo ; George, Steven M.

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In situ Fourier transform infrared (FT-IR) spectroscopy was used to study the atomic layer deposition mechanism of hafnium silicate films with dichlorobis[bis(trimethylsilyl)amido] hafnium (HfCl2[N(SiMe3)2]2) and water. The surface species was monitored during atomic layer deposition using vacuum chambers designed for in situ FT-IR spectroscopy studies. Vibrational spectroscopy reveals the gain and loss of surface species during the two surface half-reactions. The behavior of the functional group (such as OΗ, Si–(CH3)x, and CH was monitored and from that, the temperature dependence of the growth rate and the film composition could be explained. It was also found that SiOSi peaks between 1000 and 1200 cm-1 were formed when water was dosed above 300°C, which could explain the incorporation mechanism of Si into the film.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 6 )