By Topic

Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Reyes-Betanzo, C. ; Instituto Nacional de Astrofı´sica, Óptica y Electrónica—INAOE, Apartado Postal 51, CP 72000, Puebla, Pue. México ; Moshkalyov, S.A. ; Ramos, A.C.S. ; Swart, J.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1701858 

The results of a study of SiNx, SiO2, and Si etching in a high-density electron cyclotron resonance plasma using mixtures containing SF6, NF3, N2, O2, and Ar are presented. Higher selectivities of SiNx etching over SiO2 (up to ∼100) were achieved with NF3, while higher selectivities over Si (up to 5–10) were obtained with SF6-based mixtures. Plasma and surface processes responsible for etching are analyzed, and mechanisms of nitride etching in NF3-based plasmas are proposed. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 4 )