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Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures

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4 Author(s)
Reyes-Betanzo, C. ; Instituto Nacional de Astrofı´sica, Óptica y Electrónica—INAOE, Apartado Postal 51, CP 72000, Puebla, Pue. México ; Moshkalyov, S.A. ; Ramos, A.C.S. ; Swart, J.W.

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The results of a study of SiNx, SiO2, and Si etching in a high-density electron cyclotron resonance plasma using mixtures containing SF6, NF3, N2, O2, and Ar are presented. Higher selectivities of SiNx etching over SiO2 (up to ∼100) were achieved with NF3, while higher selectivities over Si (up to 5–10) were obtained with SF6-based mixtures. Plasma and surface processes responsible for etching are analyzed, and mechanisms of nitride etching in NF3-based plasmas are proposed. © 2004 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 4 )