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Fabrication of a self-absorbing, self-supported complementary metal-oxide-semiconductor compatible micromachined bolometer

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2 Author(s)
Ahmed, A.H.Z. ; Department of Electronics, Carleton University, Ottawa K1S 5B6, Canada ; Tait, R.N.

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This work describes a fabrication process for the manufacturing of a surface micromachined microbridge-type bolometer for infrared thermal imaging applications, which is compatible with any standard complementary metal-oxide-semiconductor process. The bolometer uses a high resistivity amorphous GexSi1-xOy active layer incorporated in a self-absorbing structure for infrared radiation, requiring no additional absorber layer. The device is surface micromachined for thermal isolation and is self-supported by its contact metal legs, with no additional support structure. The design uses a vertical current flow arrangement suitable for a high resistivity a-GexSi1-xOy sensing layer and both sandwich and sandwich-gap configurations are demonstrated. Optimum polyimide sacrificial layer patterning for subsequent deposition of layers is described and optimum metal thickness for the required sheet resistance is studied. A planar surface for the deposited semiconductor layer is obtained by using a recessed base electrode structure. Finally optimum conditions for plasma releasing of the structure are described. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 3 )