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Growth of InGaN self-assembled quantum dots and their application to photodiodes

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8 Author(s)
Ji, L.W. ; Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China ; Su, Y.K. ; Chang, S.J. ; Tsai, S.T.
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Nanometer-scale InGaN self-assembled quantum dots (QDs) have been prepared by growth interruption during metalorganic chemical vapor deposition growth. With a 12 s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QD density was about 2×1010cm-2. In contrast, much larger InGaN QDs were obtained without growth interruption. InGaN metal-semiconductor-metal photodiodes with and without QDs were also fabricated. It was found that the QD photodiode with lower dark current could operate in the normal incidence mode, and exhibit a stronger photoresponse. © 2004 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 3 )