Fabrication of short channel organic thin film transistors by Si-etching method

By using a Si etching and oxidation method, drain and source patterns for organic thin film transistors (OTFTs) have been fabricated without the need of precise mask alignment. OTFTs were fabricated on these patterns by spin coating a layer of Poly [2-methoxy-5-(2^′-ethylhexyloxy)-1,4-phenylene vinylene]. From measurement results on devices with different channel lengths down to 0.5 μm, a pronounced short channel effect was observed. © 2004 American Vacuum Society.