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Fabrication of short channel organic thin film transistors by Si-etching method

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4 Author(s)
Chen, Y. ; Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec, Canada H3A 2A7 ; Zhu, W.W. ; Xiao, S. ; Shih, I.

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By using a Si etching and oxidation method, drain and source patterns for organic thin film transistors (OTFTs) have been fabricated without the need of precise mask alignment. OTFTs were fabricated on these patterns by spin coating a layer of Poly [2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene]. From measurement results on devices with different channel lengths down to 0.5 μm, a pronounced short channel effect was observed. © 2004 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:22 ,  Issue: 3 )

Date of Publication:

May 2004

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