A new precursor combination (SiCl4 and Zr(OtC4H9)4) was used to deposit Zr silicate with Zr(OtC4H9)4 as a zirconium source and oxygen source at the same time. SiCl4 and Zr(OtC4H9)4 have higher vapor pressures than their counterpart, ZrCl4 and tetra-n-butyl orthosilicate (TBOS), and it was expected that the cycle time would be shorter. The deposition temperature of the new combination was about 150 °C lower than that of ZrCl4 and TBOS. The film was zirconium rich while it was silicon rich with ZrCl4 and TBOS. Growth rate (nm/cycle), composition ratio [Zr/(Zr+Si)], and chlorine impurity were decreased with increasing deposition temperature from 125 to 225 °C. The composition ratio of the film deposited at 225 °C was 0.53 and the chlorine content was about 0.4 at. %. No carbon was detected by x-ray photoelectron spectroscopy. © 2003 American Vacuum Society.