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Atomic layer deposition of zirconium silicate films using zirconium tetra-tert-butoxide and silicon tetrachloride

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3 Author(s)
Kim, Won-Kyu ; Laboratory for Advanced Molecular Processing, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea ; Kang, Sang-Woo ; Rhee, Shi-Woo

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A new precursor combination (SiCl4 and Zr(OtC4H9)4) was used to deposit Zr silicate with Zr(OtC4H9)4 as a zirconium source and oxygen source at the same time. SiCl4 and Zr(OtC4H9)4 have higher vapor pressures than their counterpart, ZrCl4 and tetra-n-butyl orthosilicate (TBOS), and it was expected that the cycle time would be shorter. The deposition temperature of the new combination was about 150 °C lower than that of ZrCl4 and TBOS. The film was zirconium rich while it was silicon rich with ZrCl4 and TBOS. Growth rate (nm/cycle), composition ratio [Zr/(Zr+Si)], and chlorine impurity were decreased with increasing deposition temperature from 125 to 225 °C. The composition ratio of the film deposited at 225 °C was 0.53 and the chlorine content was about 0.4 at. %. No carbon was detected by x-ray photoelectron spectroscopy. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:21 ,  Issue: 5 )