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Heterojunction photovoltaic devices utilizing single wall carbon nanotube thin films and silicon substrates

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8 Author(s)
Hang Zhou ; Engineering Department, University of Cambridge, 9 JJ Thomson Avenue, CB3 0DF, USA ; Unalan, H.E. ; Hiralal, Pritesh ; Colli, Alan
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In this work, we demonstrate heterojunction photovoltaic devices utilizing transparent and conducting single wall carbon nanotube (SWNT) thin films as the p-layer on n-type crystalline silicon substrate. The best device shows a short circuit current of 2.74 mA/cm2 with an open circuit voltage of 0.4V (AM 1.5). In addition, the concept of applying SWNT film to a thin-film amorphous Si solar cell is also demonstrated. SWNT thin films can be applied via simple solution based methods. SWNT/Si heterojunction devices have remained stable under laboratory conditions for months so far.

Published in:

Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE

Date of Conference:

11-16 May 2008