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High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with a tunable bandwidth up to 22 GHz using a novel circuit design

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5 Author(s)
Klepser, B -U H ; Lab. for Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland ; Spicher, J. ; Bergamaschi, C. ; Patrick, W.
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High speed monolithically integrated photoreceivers were fabricated showing flat photo response and a state of the art bandwidth of 18 GHz, which should be sufficient for data transmission systems well beyond 20 Gbit/s. The circuitry consists of a high input impedance front-end design followed by an equalizing second stage to compensate the input capacitance. A state of the art input noise current of 12 pA/√Hz within the bandwidth was obtained. The bandwidth of the photoreceiver can be tuned with the bias voltages. For a 3 dB peak at 15 GHz a total bandwidth of 22 GHz was obtained

Published in:

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Date of Conference:

21-25 Apr 1996

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