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1.3-μm buried-heterostructure lasers using a CH4 reactive-ion-etched mesa structure grown by metalorganic vapor phase epitaxy

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6 Author(s)
Kondo, Y. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Kishi, K. ; Itoh, M. ; Oohashi, H.
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This paper reports of our study on using dry etching and metalorganic vapor phase epitaxy (MOVPE) to fabricate of buried-heterostructure (BH) InGaAsP-InGaAsP strained layer MQW lasers. With a dry-etched mesa there was anomalously large Zn diffusion into the mesa structure and it seriously degraded the lasing characteristics. Therefore, we inserted a buffer layer between the side wall of the dry-etched mesa and the p-InP current blocking layer. The buffer layer almost entirely eliminates Zn diffusion without changing the mesa geometry unlike the wet-etching treatment of the mesa structure. Fabricated lasers show high performance, high uniformity and good reliability

Published in:

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Date of Conference:

21-25 Apr 1996