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Fabrication of A-Si:H Solar cells on high haze SnO2:F thin films

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6 Author(s)
Kambe, Mika ; Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama, 221-8755 Japan ; Takahashi, A. ; Taneda, N. ; Masumo, Kunio
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In this work we report on the properties of amorphous silicon (a-Si:H) p-i-n solar cells fabricated on glass substrates covered with extremely high haze fluorinedoped tin oxide (SnO2:F) transparent conductive oxide (TCO) thin films, HU-TCO. The HU-TCO shows high haze value thorough the whole optical region where a-Si:H and microcrystalline silicon (μc-Si:H) solar cells are sensitive. We demonstrate here that open-circuit voltage (Voc) and fill factor (FF) of a-Si:H solar cells fabricated on HU-TCOs does not decrease significantly compared to the cells on conventional pyramidal texture TCOs. We also demonstrate here that Voc and FF of a-Si:H solar cells depend on not only surface morphology of TCOs, but also strongly depend on thickness and deposition conditions of the solar cells.

Published in:

Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE

Date of Conference:

11-16 May 2008

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