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Silicon solar cells with front hetero-contact and aluminum alloy back junction

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8 Author(s)
Yuan, Hao-Chih ; National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO 80401, USA ; Page, M.R. ; Iwaniczko, E. ; Xu, Yueqin
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We prototype an alternative n-type monocrystalline silicon (c-Si) solar cell structure that utilizes an n/i-type hydrogenated amorphous silicon (a-Si:H) front hetero-contact and a back p-n junction formed by alloying aluminum (Al) with the n-type Si wafer. Such a structure combines a conventional high-throughput Al-Si alloying process with excellent front surface passivation provided by a-Si:H. A key process consideration is to preserve the clean c-Si front surface through the high-temperature alloying, so there will be effective a-Si:H passivation. From cell simulations, we estimate a front SRV of 10–50 cm/sec has been achieved in our process. The best prototype 1×1 cm2 cell with planar front surface and single anti-reflection (AR) coating layer has demonstrated a confirmed conversion efficiency of 13.5%, Voc of 604.7 mV, and fill factor (FF) of 79.9%. Processes for further efficiency improvements are described.

Published in:

Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE

Date of Conference:

11-16 May 2008

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