By Topic

Hydrogen contamination in Ge-doped SiO2 thin films prepared by helicon activated reactive evaporation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Li, W.T. ; Australian Photonics CRC, Research School of Physical Science and Engineering, The Australian National University, ACT 0200, Australia ; Bulla, D.A.P. ; Love, J. ; Luther-Davies, B.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1570842 

Germanium-doped silicon oxide thin films were deposited at low temperature by using an improved helicon plasma assisted reactive evaporation technique. The origins of hydrogen contamination in the film were investigated, and were found to be H incorporation during deposition and postdeposition water absorption. The H incorporation during deposition was avoided by using an effective method to eliminate the residual hydrogen present in the deposition system. The microstructure, chemical bonds, chemical etch rate, and optical index of the films were studied as a function of the deposition conditions. Granular microstructures were observed in low-density films, and were found to be the cause of postdeposition water absorption. The granular microstructure was eliminated and the film was densified by increasing the helicon plasma power and substrate bias during deposition. A high-density film was shown to have no postdeposition water absorption and no OH detected by using a Fourier-transform infrared spectrometer. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:21 ,  Issue: 3 )