By Topic

Atomic structure analysis of SiO2/Si and Si3N4/Si interfaces by high-resolution transmission electron microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
3 Author(s)
Ikarashi, Nobuyuki ; Silicon Systems Research Laboratory, NEC Corporation, 1120 Shimokuzawa, Sagamihara 229-1198, Japan ; Watanabe, K. ; Miyamoto, Yoshiyuki

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1554951 

We used cross-sectional high-resolution transmission electron microscopy to directly observe the atomic structures at SiO2/Si and Si3N4/Si interfaces. These observations provided the first direct evidence that cristobalite-like crystalline SiO2 exists at the interface. Our observations also show that in one of the observed N-induced interfacial geometries, a N atom replaces a Si atom at the second interfacial layer, and a dangling bond was produced on a Si atom adjacent to the N atom. We thus argue that a large elastic strain at a crystalline SiO2/Si interface probably plays an important role in preserving the initial atomic-scale flatness of the interface; that is, the strain results in layer-by-layer oxidation. Furthermore, we infer that the difference in interfacial flatness between Si3N4/Si and SiO2/Si can be explained in terms of the difference in their interfacial strain. © 2003 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:21 ,  Issue: 2 )