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Characterization of low permittivity (low-k) polymeric dielectric films for low temperature device integration

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4 Author(s)
Sivoththaman, S. ; Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada ; Jeyakumar, R. ; Ren, L. ; Nathan, A.

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Spin-coated low-k dielectrics are now widely used in integrated circuit processing due to their low permittivity and planarization properties. Another area of potential application is in large area digital imaging using amorphous silicon (a-Si:H) technology where low-k dielectrics enable new integration schemes for thin film transistors (TFT) and sensors. In this work, the properties of spin-coated, polymeric, low-k dielectric materials, BCB (benzocyclobutene) and HSQ (hydrogen silsesquioxane), are studied after treating them with low temperature anneals. Fourier transform infrared spectroscopy (FTIR), high frequency capacitance–voltage, topographic planarization, and wafer deflection stress measurements have been used to characterize the films so as to correlate with processing conditions. Lower k values are obtained for lower process temperatures and are correlated by capacitance and FTIR measurements. Annealing in the presence of O2 appears to increase the permittivity. The BCB films yield low stress and good (≫90%) planarization and are suitable as interlevel dielectrics in the vertical integration of a-Si TFT and sensor arrays. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:20 ,  Issue: 3 )

Date of Publication:

May 2002

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