By Topic

Control of dielectric cap induced band-gap shift in 1.55 μm laser structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wojcik, J. ; Department of Engineering Physics, Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada ; Robinson, B.J. ; Thompson, D.A. ; Mascher, P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.1463074 

Silicon oxynitride (SiOxNy) thin films, deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition, have been used to induce blueshifting of the emission wavelength of 1.55 μm partial three quantum well laser structures after an annealing treatment. The SiOxNy caps had thicknesses of about 1000 Å and refractive indices ranging from 1.45 to 1.85. Room temperature photoluminescence was used to measure the magnitude of the cap-induced blueshift. It was found that the maximum blueshift occurs for an index of refraction of 1.63. Rapid thermal annealing was applied after the deposition and the importance of accurate temperature control is discussed. Finally, the role of the microwave power is analyzed and its impact on the blueshift is discussed. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:20 ,  Issue: 3 )