By Topic

Effects of initial layers on surface roughness and crystallinity of microcrystalline silicon thin films formed by remote electron cyclotron resonance silane plasma

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Murata, Kazuya ; Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan ; Kikukawa, Daisuke ; Hori, M. ; Goto, Toshio
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have observed μc-Si:H films grown in the glass substrate in electron cyclotron resonance plasma-enhanced chemical vapor deposition employing two-step growth (TSG) method, where the seed layer was formed without charged species firstly, and subsequently, the film with charged species. The μc-Si:H films with smooth surface and high crystallinity were synthesized with a relatively high deposition rate at a low substrate temperature by TSG. By Fourier transform infrared attenuated-total reflection, it was found that the surface roughness and crystallinity of seed layer were related to the ratio of SiH bonds over SiH2 ones in the film. Consequently, the control of chemical bonds at the initial layer is of importance and TSG method is effective for the formation of μc-Si:H film with high quality. © 2002 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:20 ,  Issue: 3 )