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Characterization of silicon-rich nitride and oxynitride films for polysilicon gate patterning. I. Physical characterization

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5 Author(s)
Joseph, E.A. ; Texas Instruments, Inc., M/S 3701, Box 650311, Dallas, Texas 75265 ; Gross, C. ; Liu, H.Y. ; Laaksonen, R.T.
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We report on the characterization of silicon-rich nitride (SRN) and silicon-rich oxynitride (SRON) films used in poly-Si gate patterning. SRON and SRN films were deposited by plasma-enhanced chemical vapor deposition in a commercial 200 mm reactor. Film composition was measured using Rutherford backscattering, and hydrogen concentration was determined using helium forwardscattering spectroscopies. For a typical SRON film, the atomic percentages of Si/O/N/H were ∼40/30/10/20, while a typical SRN film had Si/N/H of ∼40/35/25. Blanket films of 3000–4000 Å thickness were characterized optically using Fourier-transform infrared (FTIR) spectroscopy over 400–4000 cm-1, and showed evidence for significant Si–Si, Si–H, and N–H bonding. Additional characterization using variable-angle spectroscopic ellipsometry over the range of 140–1000 nm, to obtain optical constants for lithography modeling, will be reported in a future article. The significant H content and Si–Si bonding of the SRN and SRON films gives rise to optical absorption in the films below 500 nm that enables their use as antireflection layers. © 2001 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:19 ,  Issue: 5 )