Cart (Loading....) | Create Account
Close category search window

Influence of substrate bias on the microstructure and internal stress in Cu films deposited by filtered cathodic vacuum arc

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Cheng, Y.H. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 ; Tay, B.K. ; Lau, S.P. ; Shi, X.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Copper films were deposited by a novel off-plane double bend filtered cathodic vacuum arc technique at ambient temperatures. X-ray diffraction (XRD) and atomic force microscopy (AFM) are used to characterize the film’s structure and surface morphology. The substrate bending method was used to study the internal stress. The influence of substrate bias on the surface morphology, grain size, crystalline structure, and internal stress was systematically studied. XRD results indicate that all the deposited Cu films exhibit face-centered cubic-type (fcc) crystallite structure with (111) preferred orientation growth. The increase of substrate bias results in the improvement of (111) preferred orientation. At the substrate bias of 0 V, the deposited films are composed of nano-sized columnar grains, which contribute to the tensile stress in the deposited films. The grain size and surface roughness increase gradually with increasing substrate bias up to -200 V. Further increase of substrate bias results in the drastic decrease of grain size and surface roughness due to self-sputtering. The internal stress in the deposited films is also strongly dependent on the substrate bias. The increase of substrate bias results in the decrease of tensile stress in the deposited films, and the transition of tensile to compressive stress at the substrate bias of -300 V. Further increase of substrate bias results in the linear increase of compressive stress in the deposited films. At the substrate bias of -300 V, dense and stress-free Cu films can be obtained. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:19 ,  Issue: 5 )

Date of Publication:

Sep 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.