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Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor deposition

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7 Author(s)
Boo, J.-H. ; Institute of Basic Science and Department of Chemistry, Sungkyunkwan University, Suwon 440-746, Korea ; Lee, S.B. ; Lee, K.-W. ; Yu, K.-S.
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Heteroepitaxial cubic SiC thin films have been deposited on silicon substrates at temperatures in the range of 750–1000 °C using single molecular precursors by the metalorganic chemical vapor deposition (CVD) method. Single-crystalline, crack-free, stoichiometric cubic SiC films were successfully grown on both Si(001) and Si(111) substrates without surface carbonization at as low as temperature of 920 °C with 1,3-disilabutane, H3Si–CH2SiH2CH3, as a liquid single source precursor which contains silicon and carbon in 1:1 ratio. Cubic SiC thin films highly oriented in the [001] direction were also obtained on Si(001) using either a liquid mixture of 1,3,5-trisilapentane (TSP), H3Si–CH2SiH2CH2SiH3, and 2,4,6-trisilaheptane (TSH) at 980 °C or 2,6-dimethyl-2,4,6-trisilaheptane (DMTSH), H3C–SiH(CH3)–CH2SiH2CH2SiH(CH3)–CH3 at 950 °C without carrier gas. These growth temperatures were much lower than conventional CVD growth temperatures, and this is a report of cubic SiC film growth using the single molecular precursors of trisilaalkanes (i.e., DMTSH and TSP+TSH). The as-grown SiC films were characterized by in situ reflection high-energy electron diffraction and by ex situ x-ray diffrac- - tion, transmission electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and Rutherford backscattering spectroscopy © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:19 ,  Issue: 4 )

Date of Publication:

Jul 2001

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