Cart (Loading....) | Create Account
Close category search window

Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Lucovsky, Gerald ; Departments of Physics, Electrical, and Computer Engineering, and Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202

Your organization might have access to this article on the publisher's site. To check, click on this link: 

This article discusses the bonding chemistry of alternative high-k gate dielectrics that have been considered for advanced complementary metal–oxide–semiconductor devices. The replacement of SiO2 by alternative gate dielectrics requires a transition from a thermally deposited native oxide to a deposited gate dielectric. A classification scheme based on bond ionicity separates alternative gate dielectric materials into three groups that are differentiated by their amorphous morphology and electronic structure and properties. This scheme establishes trends between bond ionicity and (i) the average bonding coordination of the constituent atoms, (ii) the thermal stability against chemical phase separation and/or crystallization, and (iii) the dielectric constant. It also provides a framework for the evaluation of different criteria that have been proposed for optimization of alternative high-k metal and transition metal oxides, and their alloys with SiO2 and Al2O3. Based on technology targets for device and wafer performance and reliability, there is as yet no ideal replacement for SiO2 that increases capacitance while at the same time maintaining low levels of interfacial defects. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:19 ,  Issue: 4 )

Date of Publication:

Jul 2001

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.