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Structural characteristics of AlN films deposited by pulsed laser deposition and reactive magnetron sputtering: A comparative study

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5 Author(s)
Jagannadham, K. ; Department of Materials Science and Engineering, NSF Center for Advanced Materials Processing and Smart Structures, North Carolina State University, Raleigh, North Carolina 27695 ; Sharma, A.K. ; Wei, Q. ; Kalyanraman, R.
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Aluminum nitride films have been deposited on Si(111) substrates at different substrate temperatures using two techniques; pulsed laser deposition or reactive magnetron sputtering. The films deposited by either of the techniques have been characterized by x-ray diffraction and transmission electron microscopy to determine the crystalline quality, grain size, and epitaxial growth relation with respect to the substrate. The bonding characteristics and the residual stresses present in the films have been evaluated using Raman and Fourier transform infrared spectroscopy. Secondary ion mass spectrometry has been performed to determine the nitrogen stoichiometry and the presence of impurities such as oxygen and silicon. The adhesion strength of the AlN films to the silicon substrate and the wear resistance have been determined by scratch test and a specially designed microscopic wear test. A comparison of the different characteristic features associated with the AlN films deposited by pulsed laser deposition or magnetron sputtering is presented with particular emphasis to electronic and tribological applications. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 5 )

Date of Publication:

Sep 1998

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