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Structural change and heteroepitaxy induced by rapid thermal annealing of CaF2 films on Si(111)

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7 Author(s)
Mattoso, N. ; Departamento de Fı´sica, Laboratório de Materiais, UFPR, Caixa Postal 19081, 81531-990 Curitiba-PR, Brazil ; Mosca, D.H. ; Schreiner, W.H. ; Mazzaro, I.
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In this article we show that heteroepitaxial CaF2 films can be induced on Si(111) with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type-B epitaxy is visible by different structural techniques. The x-ray photoelectron spectroscopy results indicate the presence of a reacted layer at the CaF2/Si interface with a pronounced increase of fluorine atoms at this interface. Transmission electron microscopy results show that big structural changes occur due to the thermal pulse. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 4 )

Date of Publication:

Jul 1998

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