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Ultrathin Ta2O5 film growth by chemical vapor deposition of Ta(N(CH3)2)5 and O2 on bare and SiOxNy-passivated Si(100) for gate dielectric applications

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10 Author(s)
Son, K.-A. ; Department of Chemistry and Biochemistry, Center for Materials Chemistry, University of Texas at Austin, Austin, Texas 78712 ; Mao, A.Y. ; Kim, B.Y. ; Liu, F.
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We investigated Ta2O5 films grown by chemical vapor deposition of Ta(N(CH3)2)5 and O2 both bare and SiOxNy-passivated Si(100) using x-ray photoelectron spectroscopy, time-of-flight secondary-ion-mass spectroscopy (TOF-SIMS), and electrical measurements. The SiOxNy-passivated layer was formed by nitric oxide exposure to the Si substrate. Chemical composition of the Ta2O5 films is strongly dependent on the oxygen flow rate during film deposition; lower carbon levels and higher O/Ta ratios are observed for the films grown at higher O2 flow rates. A corresponding leakage current decrease is observed for the films grown at a high O2 flow rate. Compared to Ta2O5 films deposited on bare Si(100), the films deposited on SiOxNy-passivated layers show better electrical properties; with smaller equivalent thickness (Δteq∼6 Å), one order of magnitude lower leakage current was measured. TOF-SIMS data indicate that SiOxNy layers (∼9 Å) incorporate some oxygen during <- - roman>Ta2O5 deposition; however, regions where x=2, y=0 were not detected. Postdeposition annealing of Ta2O5/SiOxNy samples results in displacement of N by O in SiOxNy layers and oxidation of the Si substrate, forming SiO2. © 1998 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 3 )