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Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction

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8 Author(s)
Smith, A.R. ; Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 ; Ramachandran, V. ; Feenstra, R.M. ; Greve, D.W.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.581134 

We report studies of the surface reconstructions for both the Ga-face and the N-face of wurtzite GaN films grown using molecular beam epitaxy. N-face reconstructions are primarily adatom-on-adlayer structures which can be formed by room temperature submonolayer Ga deposition. These structures undergo reversible order–disorder phase transitions to 1×1 in the temperature range of 200–300 °C. Ga-face reconstructions, on the other hand, require annealing to high temperatures (600–700 °C) in order to form, and in most cases they are stable at those temperatures. The film polarity is found to be determined by the initial nucleation stage of the film growth. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

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