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P-type transparent conducting In2O3–Ag2O thin films prepared by rf magnetron sputtering

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3 Author(s)
Minami, T. ; Electron Device System Laboratory, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921, Japan ; Shimokawa, K. ; Miyata, T.

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P-type transparent conducting oxide films consisting of a new multicomponent oxide composed of In2O3 and Ag2O have been prepared by rf magnetron sputtering. After postannealing at a temperature of 500 °C in air, In2O3–Ag2O thin films prepared using In2O3–Ag2O targets with Ag2O contents of 40–60 wt % exhibited p-type conduction. A resistivity of 10-1–10-3 Ω cm and an average transmittance above 20% in the visible range were obtained in the p-type amorphous In2O3–Ag2O films. A resistivity of 8.8×10-3 Ω cm, Hall mobility of 17 cm2/Vs and hole concentration of 4.2×1019cm-3 were obtained in a film prepared with an Ag2O content of 50 wt %. © 1998 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 3 )