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Two-dimensional imaging of surface morphology by energy-analyzed secondary electrons and Auger electron spectroscopy for stepped Si(111) surfaces

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3 Author(s)
Suzuki, M. ; Center for Materials Development and Analytical Technology, NTT Advanced Technology Corporation, Atsugi, Kanagawa 243-0198, Japan ; Mogi, K. ; Homma, Y.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.581244 

We have experimentally investigated two-dimensional imaging of stepped Si surfaces by energy-analyzed electrons and Auger electron spectra from atomically flat surfaces. A stepped Si(111) surface was prepared by direct-current heating to around 1250 °C in ultrahigh vacuum. The stepped surface consisted of atomically flat terraces and step bands where atomic steps bunched in the height of about 5 nm. We found that the stepped structure could be imaged by using only the energy-analyzed secondary electrons (SEs) when the intensity was defined as the difference between the peak height and the background intensity. The image from the energy-analyzed SEs was in good agreement with the conventional SEM image obtained with non-energy-analyzed SEs. The electron-emission spectrum obtained in the direct mode included only characteristic Auger peaks of silicon SE peak. It is found that the electron-emission spectrum obtained from the atomically flat Si(111) terrace has relatively higher background than that from a sputter-cleaned Si surface. Also, it is revealed that the fine structure exists at 2.2 eV in the SE peak. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 3 )

Date of Publication:

May 1998

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