Cart (Loading....) | Create Account
Close category search window
 

Novel simple and complementary metal-oxide-semiconductor-compatible membrane release design and process for thermal sensors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Leclerc, Stephane ; Laboratory for the Integration of Sensors and Actuators, Département de Génie Physique, École Polytechnique de Montréal, C.P. 6079, Succursale Centre-ville, Montréal, Québec H3C 3A7, Canada ; Antaki, Robert ; Currie, John F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.581027 

A novel approach to the design and fabrication of released membrane thermal sensors has been developed. Its advantages are to facilitate processing over the suspended membranes after their liberation, and to allow the design of 1 μm to 100’s of μm deep cavities under the membrane. It consists in sacrificial etching of a layer up to an open silicon area hidden under the membrane, followed by front-side bulk micromachining of silicon under the membrane, to the depth desired. This approach is compatible to complementary metal-oxide-semiconductor commercial fabrication, and only needs one protective coarse lithography step and a few etching without alignment. This approach may be used in the fabrication of low temperature heated membrane gas sensors and thermal pressure sensors, as of thermal sensors in general, since thermal isolation may be optimized to high values. © 1998 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 2 )

Date of Publication:

Mar 1998

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.