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Effects of initial annealing treatments on the electrical characteristics and stability of unpassivated CdSe thin film transistors

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7 Author(s)
Belkouch, S. ; Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada ; Landheer, D. ; Masson, D.P. ; Das, S.R.
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Secondary ion mass spectrometry shows that when CdSe is annealed in air at 350 °C oxygen diffuses inside the grains and the diffusion is enhanced at the grain boundaries. Subsequent vacuum annealing removes oxygen from inside the grains and from the grain boundaries, but leaves a film with residual tightly bound oxygen and a reduced donor concentration. Annealing in vacuum at 390 °C results in a highly conductive layer with a positive threshold voltage drift resulting from the chemisorption of oxygen. Annealing in dry or wet air at 350 °C produces a highly resistive material with lower donor concentrations at the surface and in the bulk, and a lower concentration of acceptor traps at the grain boundaries. The effects of dry- and wet-air annealing on the threshold voltage drift for unpassivated CdSe thin film transistors exposed to ambient air have been monitored. A negative threshold voltage drift, which may be enhanced by the presence of a water-related species, was observed. © 1998 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 2 )