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High rate reactive dc magnetron sputter deposition of Al2O3 films

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4 Author(s)
Kharrazi Olsson, M. ; Department of Materials Science, Uppsala University, P.O. Box 534, S-751 21 Uppsala, Sweden ; Macak, K. ; Helmersson, U. ; Hjorvarsson, B.

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Aluminum oxide films were produced by reactive dc magnetron sputtering of Al in Ar+O2. The composition of the films was characterized by Rutherford backscattering measurements. Stoichiometric films possessed excellent optical properties with a refractive index of 1.6 for visible and near-infrared light. It was possible to produce stoichiometric films while keeping the target in the metallic mode of operation; the resulting deposition rate was 23 nm min-1, as compared to 0.95 nm min-1 for films grown from an oxidized target. An O/Al arrival rate ratio exceeding 17 was required for stoichiometric films to be grown at room temperature. The success of the present high-rate deposition strategy hinges on the use of a suitable deposition system geometry — including a large target-to-substrate distance and a small target size — and on the use of sufficient Ar pressure. Monte Carlo simulations are presented; they can be reconciled with our empirical data. © 1998 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 2 )