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Fluid simulation of a pulsed-power inductively coupled argon plasma

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3 Author(s)
Lymberopoulos, D.P. ; Applied Materials, 3100 Bowers Avenue, Santa Clara, California 95054 ; Kolobov, V.I. ; Economou, D.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.581072 

A one-dimensional fluid model was developed and used to investigate the spatiotemporal dynamics of a pulsed-power inductively coupled argon plasma at 10 mTorr. Particular attention was devoted to extraction and acceleration of positive ions by a radio frequency (rf) bias applied in the afterglow stage of the discharge. For bias frequencies in the range ω/2π=100 kHz–10 MHz the rf sheath is resistive in nature. Significant oscillations of the ion flux at the driven electrode observed at ωτ≈1 are related to the finite ion transit time τ through the sheath. The latter depends on the sheath thickness which is a complicated function of time in the pulsed plasma. For a constant time-average power, the time-average ion energy flux bombarding the wafer has a minimum with respect to the pulse period. This has implications for the wafer thermal budget. © 1998 American Vacuum Society.

Published in:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:16 ,  Issue: 2 )

Date of Publication: Mar 1998

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