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Epitaxial growth of TiO2 thin films by pulsed laser deposition on GaAs(100) substrates

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8 Author(s)
Liu, Xiaohua ; Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People’s Republic of China ; Chen, X.Y. ; Yin, J. ; Liu, Z.G.
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Rutile-phase TiO2 thin films have been epitaxially grown on GaAs(100) substrates at 700 °C under 5 Pa oxygen ambient pressure, and at room temperature (30 °C) and 5×10-4 Pa base vacuum by KrF pulsed excimer laser deposition. The [110]-oriented TiO2 films were composed of two types of domains perpendicular to each other in the plane. From atomic force microscopy analysis, the epitaxial films had a surface with roughness less than 7 nm in root-mean-square. © 2001 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:19 ,  Issue: 2 )

Date of Publication:

Mar 2001

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