(Zr0.8Sn0.2)TiO4 (ZST) thin films with 1 wt % ZnO addition were fabricated on n-type (100) Si substrates by reactive rf magnetron sputtering at various Ar/O2 mixing ratios (80/20, 90/10), substrate temperatures (300, 350, and 400 °C), and sputtering times (from 2–4 h). The powder target composition of (Zr0.8Sn0.2)TiO4 was synthesized in the experiment. The structure of the films on Si was determined by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The deposition rate increases with increasing Ar concentration and substrate temperature. Moreover, the higher O2 content increases the surface roughness of the deposited films. From observing the cross section and the surface morphology, ZST thin films exhibit a columnar structure. The grain size of the film increased with an increase in the substrate temperature and sputtering time and with a decrease in the oxygen partial pressure. A dielectric constant of 28 (f=10 MHz) and a resistivity of 2.1×109 Ω m were obtained for the ZST thin films in the experiment. © 2000 American Vacuum Society.