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Ti, TiN, and Ti/TiN thin films prepared by ion beam assisted deposition as diffusion barriers between Cu and Si

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6 Author(s)
Mu, Haicuan ; Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, 865 ChangNing Road, Shanghai 200050, People’s Republic of China ; Yu, Yuehui ; Luo, E.Z. ; Sundaravel, B.
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A comparative study of Ti and TiN [ion beam assisted deposition (IBAD)] films as diffusion barriers for Cu has been done. It is found that amorphous Ti (a-Ti) and TiN (a-TiN) films show better thermal stability than (010) oriented Ti (c-Ti) and (111) oriented TiN (c-TiN) films. Such thermal stability can be attributed to their microstructure lacking grains that are fast diffusion paths compared to the imperfect preferentially oriented films prepared by IBAD. Compared to a 300 Å amorphous TiN layer, a 600 Å c-Ti/a-TiN multilayer shows inferior thermal stability, while improvement resulting from the 600 Å a-Ti/a-TiN multilayer is observed. Reasons for these effects are discussed. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:18 ,  Issue: 5 )

Date of Publication:

Sep 2000

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