Cart (Loading....) | Create Account
Close category search window

Surface morphology analysis in correlation with crystallinity of CeO2(110) layers on Si(100) substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Inoue, T. ; Department of Electronic Engineering, Iwaki Meisei University, Iwaki 970-8551, Japan ; Nakamura, T. ; Nihei, S. ; Kamata, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

CeO2 layers having various crystallinity are prepared in the vicinity of the critical condition for epitaxial growth, using conventional evaporation and electron beam assisted evaporation. Surface morphology of CeO2 layers is studied using atomic force microscopy in correlation with crystallinity of the layer determined by reflection high energy electron diffraction. It is clearly observed that surface morphology changes with crystallinity of the CeO2 layers. Single crystal CeO2(110) layers have a nanometer-scale-periodically corrugated surface structure, which consists of (111) facets. As the crystalline quality of samples becomes worse, the number of irregular shaped hillocks and tetrahedral hillocks increases, which correspond to distorted (110) grains and (111)-oriented polycrystalline grains, respectively. It is found that crystalline quality is not uniform but various crystallinity regions are distributed from place to place and their population ratio changes according to the degree of crystalline quality. The surface of polycrystalline layers with a tendency of (111) orientation consists of tetrahedral hillocks with irregular in-plane rotational orientations within the horizontal plane. These features are discussed in terms of the surface properties of the substrates at the early stage of growth. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:18 ,  Issue: 4 )

Date of Publication:

Jul 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.