By Topic

Roles of N2 gas in etching of platinum by inductively coupled Ar/Cl2/N2 plasmas

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Ryu, Jae-Heung ; Department of Electrical Engineering, Chungang University, 221, Huksuk-Dong, Dongjak-Gu, Seoul, 156-756, Korea ; Kim, Nam-Hoon ; Kim, Hyeon-Soo ; Geun-Young Yeom
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Recently, much effort has been expended on etching platinum film, which is the candidate electrode material for the capacitor structure of future dynamic random access memory and ferroelectric random access memory. One of the most critical problems in the etching of platinum was generally considered to be the gradual character of the etch slope. Therefore, the addition of N2 gas into the Ar/Cl2 gas mixture, which had been proposed as the optimized platinum etching gas combination in our previous article, was performed. The selectivity of platinum to oxide as an etch mask increased with the addition of N2 gas, and a steeper etch slope, over 75°, could be obtained. These phenomena were interpreted as the result of a blocking layer, such as Si–N or Si–O–N, on the oxide mask. Compositional analysis was carried out by x-ray photoelectron spectroscopy and secondary ion mass spectrometry. Moreover, the higher etch rate of the Pt film and a steeper profile without residues (such as Pt–Cl and Pt–Pt) could be obtained by the addition of 20% N2 gas in the Ar(90)/Cl2(10) plasma. The plasma characteristics were extracted from optical emission spectroscopy. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:18 ,  Issue: 4 )