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Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process

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11 Author(s)
Gotoh, Y. ; Electrotechnical Laboratory MITI, 1-1-4 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Matsumoto, K. ; Maeda, T. ; Cooper, E.B.
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The single-walled carbon-nanotube (SWNT) was grown directly onto the top of the conventional Si atomic force microscopy (AFM) cantilever. This SWNT AFM cantilever was introduced into the AFM nano-oxidation process, which oxidized the titanium (Ti) metal film on the atomically flat α-Al2O3 substrate and formed the ultranarrow oxidized titanium (TiOx) line of 5 nm width. This TiOx line was used as the tunnel junction of the single-electron transistor (SET), and the SET fabricated by this process showed room-temperature Coulomb oscillation with periods of 1 V. It was determined by three-dimensional simulation that the tunnel-junction capacitance shows only weak dependence on the tunnel-junction width. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:18 ,  Issue: 4 )