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Low-k Si–O–C–H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor

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3 Author(s)
Kim, Yoon-Hae ; School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea ; Lee, Seok-Kiu ; Kim, Hyeong Joon

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Low-k Si–O–C–H composite films were prepared using bis-trimethylsilylmethane as a precursor and oxygen in a rf plasma reactor. The growth rate of the Si–O–C–H composite film followed a second-order exponential decay function. This behavior could be explained by the formation of nanosized voids due to Si–CH3 and OH-related bonds included in the film. OH-related bonds were detected in films deposited at 30 °C, but could not be observed for the films deposited above 60 °C. In contrast, Si–CH3 bonds were also detected at 30 °C, but decreased monotonically up to 210 °C and were absent of higher temperatures. After postannealing the film deposited at 30 °C, the Si–CH3 bonds were unchanged, but the OH-related bonds were easily removed. This film showed a low dielectric constant of 2.44 and leakage current density of 4.4×10-7 A/cm2 at 1 MV/cm. © 2000 American Vacuum Society.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:18 ,  Issue: 4 )