By Topic

Real-time thickness and compositional control of Ga1-xInxP growth using p-polarized reflectance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Woods, V. ; Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 ; Dietz, N. ; Ito, K. ; Lauko, I.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Advances in the engineering and design of advanced electro-optical materials require sensors and control strategies that allow tight control over thickness and composition of multilayered structures. In response to this demand, we developed and applied p-polarized reflectance (PR) for real-time optical characterization and control of heteroepitaxial GaP/GaInP growth under pulsed chemical beam epitaxy conditions. For closed-loop control, we applied nonlinear control algorithms (based on nonlinear Kalman filtering) that utilizes the PR signals to adjust the source flows involved in the heteroepitaxial growth of Ga1-xInxP on Si(001). A reduced order surface kinetics model has been formulated to establish the linkage between the surface reaction kinetic and its optical response. These data are linked to compute the compositional and thickness change per time unit, utilizing the monitored PR signals for validation. This allows the establishment of feedback control algorithms, able to control both the growth rate and composition of Ga1-xInxP heterostructures. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:18 ,  Issue: 4 )