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Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O2 and H2O as additive gases

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6 Author(s)
Tonnis, Eric J. ; Department of Chemical Engineering, University of California, Berkeley, Berkeley, California 94720-1462 ; Graves, D.B. ; Vartanian, Victor H. ; Beu, Laurie
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.582199 

A current major environmental concern involves the emission of fluorinated compounds (FCs) used in semiconductor manufacturing for dielectric etching and plasma-assisted chamber cleaning processes in dielectric film chemical vapor deposition (CVD) systems. While progress has been made in reducing FC emissions from CVD tools using alternative chemistries and process optimization, the stringent demands of dielectric etch processes have limited emission reduction from this source. A promising strategy for reducing FC emissions from etch processes is point-of-use plasma abatement. In this approach, a high-density plasma is generated by a device installed downstream of the process chamber in the foreline that dissociates the FC effluent species and recombines the resulting fragments with additive gas fragments to create by-products that are either environmentally benign or scrubbable. In this work, the performance of an inductively coupled plasma abatement device is examined for the treatment of exhaust from a commercial, magnetically enhanced reactive ion etcher. Using either O2 or H2O vapor as abatement additives, FC destruction and removal efficiencies (DREs) of greater than 95% were observed for most process conditions tested. Abatement by-product distributions were found to vary significantly with additive gas identity. Oxygen addition abatement by-products consisted primarily of HF, CO2, COF2, and F2, while H2O addition abatement by-products were primarily HF and CO. Abatement input power was found to be the most significant factor affecting DREs, while argon dilution and total gas load showed little impact over the ranges tested. In additio- - n, wafer metrology indicated no negative process impacts due to abatement device operation. Estimation of the Peclet number within the foreline indicates virtually no probability of abatement product backdiffusion at the foreline pressures and flows tested. © 2000 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:18 ,  Issue: 2 )

Date of Publication:

Mar 2000

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