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Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide (Ta2O5) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source

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6 Author(s)
Luo, E.Z. ; Department of Electronic Engineering and Materials Science & Technology Research Center, The Chinese University of Hong Kong, Shatin, N. T., Hong Kong ; Sundaravel, B. ; Guo, H.Y. ; Wilson, I.H.
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Using Rutherford backscattering spectrometry, nuclear reaction analysis, and elastic recoil detection analysis, we have analyzed the fluorine (F) and hydrogen (H) incorporated in thin tantalum pentoxide (Ta2O5) films on Si substrates prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source. It is shown that both F and H contents depend strongly on the deposition conditions, especially on the microwave power. Narrow resonant reaction 19F(α,p)22Ne analysis shows that there is considerable diffusion of F into the Si substrate. © 1999 American Vacuum Society.

Published in:

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:17 ,  Issue: 6 )

Date of Publication:

Nov 1999

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